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Materials | Free Full-Text | Characterization of Gallium Indium Phosphide and Progress of Aluminum Gallium Indium Phosphide System Quantum-Well Laser Diode
Laser Diode Market Comprehensive Research Study and Forecast to 2032
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Effect of passivation layers on characteristics of AlGaInP ridge waveguide laser diodes - ScienceDirect
635nm GaInP / AlGaInP Laser Diode Wafer Grown by MOCVD
Laser Diodes: The Technology Explained - Ushio Europe B.V.
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637nm, 250mW Laser Diode
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AlGaInP lasers processing steps for the µ-PL experiment. | Download Scientific Diagram
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High-power 660-nm AlGaInP laser diodes with a small aspect ratio for the beam divergence | Semantic Scholar
Effect of passivation layers on characteristics of AlGaInP ridge waveguide laser diodes - ScienceDirect
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AlGaInP laser diode structures with different ridge designs. | Download Table
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HL65241DG/242DG/243DG 660nm/110mW(CW)/220mW(Pulse) AlGaInP Laser Diode - Necsel - PDF Catalogs | Technical Documentation | Brochure
AlGaInP broad-area laser structure. | Download Scientific Diagram
Effect of Temperature on the Electrical Parameters of Indium Phosphide/ Aluminum Gallium Indium Phosphide (InP/AlGaInP)
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